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National Stock Number(NSN): 5962-01-250-3458 (5962012503458, 012503458)
| NIIN: |
01-250-3458 |
Item Name: |
MICROCIRCUIT,MEMORY |
INC: |
41015
|
| FSC: |
5962
|
Assignment Date: |
Feb-27-1987 |
CRIT: |
|
IIG: |
41015 |
| ISC: |
5 |
Date Standardized: |
Feb-27-1987 |
HMIC: |
N |
DODIC: |
|
| NSC: |
5 |
Cancellation Date: |
Oct-01-1997 |
PMIC: |
U |
FIIG: |
|
| ESD: |
B |
Schedule B: |
|
DEMIL: |
Q |
DEMIL INT: |
|
| TIIC: |
|
Originator: |
97 |
ADPEC: |
0 |
RPDMRC: |
|
| NIIN: |
01-217-5380 |
Item Name: |
MICROCIRCUIT,MEMORY |
| FSC: |
5962 |
Replacement Date: |
Oct-01-1997 |
|
INC: |
41015 |
| Part Number |
CAGE |
Company |
Status |
RN CC |
RN VC |
DAC |
RN AAC |
RN FC |
RN SC |
RN JC |
SADC |
HCC |
MSDS |
|
725004-738 |
05869
|
RAYTHEON COMPANY |
H |
3 |
2 |
A |
TX |
|
|
|
|
|
|
|
8103907JA |
14933
|
DEFENSE ELECTRONICS SUPPLY CENTER |
H |
5 |
1 |
A |
TX |
|
|
|
|
|
|
|
DH45140 |
34335
|
ADVANCED MICRO DEVICES INC |
H |
5 |
2 |
6 |
TX |
|
|
|
|
|
|
| MOEC |
SOS |
A A C |
R C |
S L C |
CIIC |
U P Q |
U S C |
Unit Price |
UI |
UICF |
MCD |
Action Date |
C/H |
| DN |
S9E |
Y |
|
0 |
U |
0 |
N |
$37.31 |
EA |
|
9N----- |
Oct-01-1997 |
H |
| DS |
S9E |
Y |
|
0 |
U |
0 |
D |
$37.31 |
EA |
|
------- |
Oct-01-1997 |
H |
| MOEC |
PC |
Phrase |
QPA |
UOM |
OOU |
JTC |
| DN |
Z |
DISCNT USE 5962-01-217-5380 |
000 |
|
|
|
| DS |
Z |
DISCNT USE 5962-01-217-5380 |
000 |
|
|
|
Technical Characteristics Information
| MRC |
Requirement Statement |
Reply Statement |
| ADAQ |
BODY LENGTH |
1.290 INCHES MAXIMUM |
| ADAT |
BODY WIDTH |
0.625 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.210 INCHES MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| AFGA |
OPERATING TEMP RANGE |
0.0 TO 70.0 CELSIUS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 CELSIUS |
| AGAV |
END ITEM IDENTIFICATION |
TIME CODE GENERATOR,AUXILIARY TD-1372/SQX-2 |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND STATIC OPERATION AND W/ENABLE AND BURN IN AND ELECTROSTATIC SENSITIVE |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP |
INPUT CIRCUIT PATTERN |
22 INPUT |
| CRHL |
BIT QUANTITY |
16384 |
| CSWJ |
WORD QUANTITY |
2048 |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-3.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ |
TIME RATING PER CHACTERISTIC |
120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| PKWT |
UNPACKAGED UNIT WEIGHT |
6.5 GRAMS |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| MOE Rule |
Former MOER |
Effective |
AMC |
AMSC |
IMC |
IMCA |
Collaborators |
Receivers |
| N9ND |
|
Apr-01-1991 |
3 |
C |
Z |
HD |
HD |
|
| TAN1 |
|
Sep-02-1996 |
|
|
|
|
|
|
| YB01 |
|
Apr-22-1992 |
|
|
|
|
YB |
YB |
| ZA01 |
|
Apr-01-1991 |
|
|
|
|
ZA |
ZA |
| ZG01 |
|
Dec-04-1996 |
|
|
|
|
ZG |
ZG |
|